Building and method for manufacture of integrated semiconductor

Ventilation – Clean room

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553852, F24F 316

Patent

active

053503368

ABSTRACT:
A manufacturing plant is described for producing semiconductors that will function at a low production level during the initial phase. The plant can be expanded to provide a greater production volume with minimum additional investment, minimum disruption to the existing manufacturing line, and can be done quickly at minimum cost. Also described is a method for building a manufacturing plant for integrated circuit devices that can be operated at a low level during the initial phase, and provides for an efficient and rapid expansion to a higher level of manufacturing with minimum cost, and disruption to the existing line.

REFERENCES:
patent: 4534389 (1985-08-01), Tullis
patent: 4549472 (1985-10-01), Endo et al.
patent: 4674936 (1987-06-01), Bonora
patent: 4693175 (1987-09-01), Hashimoto
patent: 4724874 (1988-02-01), Parikh et al.
patent: 4781511 (1988-11-01), Harada et al.
patent: 4826360 (1989-05-01), Iwasawa et al.
patent: 5058491 (1991-10-01), Weimer et al.
patent: 5167575 (1992-12-01), MacDonald
Stephen Titus et al., "Defect Density Reduction in a Class 100 Fab Utilizing The Standard Mechanical Interface", Solid State Technology, PennWell Publishing Company, Nov. 1987.

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