Buffered substrate for semiconductor devices

Details Buffered substrate for semiconductor devices Buffered substrate for semiconductor devices

1996-05-31

1998-03-31

Turner, Archene

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

117 43, 117 45, 4271261, 4271262, 4271263, 428156, 428336, 428428, 428446, 428469, 428432, 428472, 428697, 428701, 428702, 437 24, 437 84, 437228, B32B 1500

Patent

active

057336415

ABSTRACT:
The invention provides a buffered substrate that includes a substrate, a buffer layer and a silicon layer. The buffer layer is disposed between the substrate and the silicon layer. The buffer layer has a melting point higher than a melting point of the substrate. A polycrystalline silicon layer is formed by crystallizing the silicon layer using a laser beam.

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patent: 4906594 (1990-03-01), Yoneda
patent: 4915772 (1990-04-01), Fehlner
patent: 5037774 (1991-08-01), Yamawaki
patent: 5061655 (1991-10-01), Ipposhi
James S. Im and H.J. Kim, "On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si films", Appl. Phys. Lett. 64(17), 25 Apr. 1994, pp. 2303-2305.
Hiroyuki Kuriyama et al., "Comprehensive Study of Lateral Grain Growth in Poly-Si Films by Excimer Laser Annealing and Its Application to Thin Film Transistors", Jpn. J. Appl. Phys., vol. 33 (1994), pp. 5657-5662, Part 1, No. 10, Oct. 1994.
R.I. Johnson et al., "Critical Laser Fluence Observed in (111) Texture, Grain Size and Mobility of Laser Crystallized Amorphous Silicon", Mat. Res. Soc. Symp. Proc., vol. 297, 1993, pp. 533-538.
CRC Handbook, 64th Ed. 1984, B-31 B-135.

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