Buffer zone for the prevention of metal migration

Details Buffer zone for the prevention of metal migration Buffer zone for the prevention of metal migration

2007-10-30

2007-10-30

Clark, S. V. (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257S513000, C438S404000

Reexamination Certificate

active

10974403

ABSTRACT:
Particle migration, such as silver electro-migration, on a flat ceramic surface is effectively eliminated by an upward vertical barrier formed on the surface or a groove formed in the surface between two silver conductors.

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