Buffer structure for semiconductor device and methods of...

Details Buffer structure for semiconductor device and methods of... Buffer structure for semiconductor device and methods of...

2011-04-19

2011-04-19

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S190000

Reexamination Certificate

active

07928468

ABSTRACT:
Embodiments of the present invention describe a semiconductor device having an buffer structure and methods of fabricating the buffer structure. The buffer structure is formed between a substrate and a quantum well layer to prevent defects in the substrate and quantum well layer due to lattice mismatch. The buffer structure comprises a first buffer layer formed on the substrate, a plurality of blocking members formed on the first buffer layer, and second buffer formed on the plurality of blocking members. The plurality of blocking members prevent the second buffer layer from being deposited directly onto the entire first buffer layer so as to minimize lattice mismatch and prevent defects in the first and second buffer layers.

REFERENCES:
patent: 6312967 (2001-11-01), Ikeda
patent: WO 2007021017 (2007-02-01), None
Qiming Li et al., “Morphological Evolution and Strain Relaxation of Ge Islands Grown on Chemically Oxidized Si(100) by Molecular-Bea Epitaxy”, Journal of Applied Physics 98, 073504, 2005 American Institute of Physics, pp. 073504-1 to 073504-8.

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