Buffer layers to enhance the C-axis growth of Bi4Ti3O12 thin...

Details Buffer layers to enhance the C-axis growth of Bi4Ti3O12 thin... Buffer layers to enhance the C-axis growth of Bi4Ti3O12 thin...

2005-07-26

2005-07-26

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S686000

Reexamination Certificate

active

06921671

ABSTRACT:
A method of fabricating a ferroelectric thin film on an iridium-composite electrode in an integrated circuit device includes preparing a substrate; depositing an iridium-composite bottom electrode on the substrate; annealing the bottom electrode in a first annealing step; depositing a buffer layer on the bottom electrode, including depositing a layer of material taken from the group of materials consisting of HfO2, ZrO2, TiO2, LaOx, La—Al—O, Ti—Al—O, Hf—Al—O, Zr—Al—O, Hf—Zr—O, Zr—Ti—O, Hf—Ti—O, La—Zr—O, La—Hf—O, and La—Ti—O; annealing the buffer layer in a second annealing step; depositing a layer of Bi4Ti3O12, to a thickness of between about 20 nm to 500 nm, on the buffer layer; annealing the ferroelectric layer in a third annealing step; and completing the integrated circuit device.

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Kijima et al.,Preparation of Bi4Ti3O12thin films on Si(100)using Bi2SiO5buffer layer and its electric characterization, J. Appl. Phys. vol. 37, Pt 1, 9B, 5171 (1998).
Nakamura et al.,Preparation of C-axis-oriented Bi4Ti3O12thin films by metalorganic chemical vapor deposition, Jpn. J. Phys. vol. 32, 4086 (1993).

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