Buffer layer for promoting electron mobility and thin film...

Details Buffer layer for promoting electron mobility and thin film... Buffer layer for promoting electron mobility and thin film...

2005-10-19

2009-10-27

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S097000, C438S482000, C257S052000, C257S049000

Reexamination Certificate

active

07608475

ABSTRACT:
A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

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patent: 5930608 (1999-07-01), Yamazaki et al.
patent: 6011277 (2000-01-01), Yamazaki
patent: 6455874 (2002-09-01), Park et al.
patent: 6984848 (2006-01-01), Liao et al.
patent: 2003/0148567 (2003-08-01), Joo et al.

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