Buffer layer for copper oxide based superconductor growth on sap

Details Buffer layer for copper oxide based superconductor growth on sap Buffer layer for copper oxide based superconductor growth on sap

1991-02-28

1992-11-10

Lusignan, Michael

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505731, 505701, 505730, 427 62, 4274193, 4274193, 428699, 428701, 428702, 20419224, B32B 100, B05D 512

Patent

active

051622947

ABSTRACT:
A supported superconductor is made where a top layer of alkaline earth metal-copper oxide based material (10) is applied to a buffer layer (14) of La.sub.2-x Sr.sub.x CuO.sub.4, where x is a value from 0 to 0.4, all of which is supported by a bottom layer (12) of .alpha.-Al.sub.2 O.sub.3.

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Witanachchi et al, "Effect of Buffer Layers on Low-Temperature Grown of Mirror-Like Superconducting Thin Films on Sapphire", Appl. Phys. Lett 55(3) Jul. 1989, pp. 295-297.
Stamper et al, "Sputter Deposition of YBa.sub.2 Cu.sub.3 O.sub.6+x on Alumina and the Influence of ZrO.sub.2 Buffer Layers", Appl. Phys. Lett. 52(20) May 1988, pp. 1746-1748.
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