Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2010-10-04
2011-12-06
Lee, Hsien Ming (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S029000, C438S048000, C257SE33001, C257SE25008, C257SE51001, C313S504000, C313S506000, C428S690000, C428S917000
Reexamination Certificate
active
08071400
ABSTRACT:
A buffer layer manufacturing method, including: a preparation step for preparing a reaction solution which includes a component (Z) of at least one kind of zinc source, a component (S) of at least one kind of sulfur source, a component (C) of at least one kind of citrate compound, a component (N) of at least one kind selected from the group consisting of ammonia and ammonium salt, and water, in which the concentration of the component (C) is 0.001 to 0.25M, the concentration of the component (N) is 0.001 to 0.40M, and the pH of the reaction solution before the start of reaction is 9.0 to 12.0; and a film forming step for forming a Zn compound layer consisting primarily of Zn(S, O) and/or Zn(S, O, OH) by a liquid phase method with a reaction temperature of 70 to 95° C.
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patent: 2008-510310 (2008-04-01), None
D.A. Johnston et al., “Chemical bath deposition of zinc sulfide based buffer layers using low toxicity materials.”, Thin Solid Films, NL Elsevier, vls. 403-404, pp. 102-106, 2002.
Office Action in corresponding Japanese Patent Application No. 2010-130999, dated Jul. 27, 2010.
F. Gode et al., “Investigations on the Physical Properties of the Polycrystalline ZnS thin Films Deposited by the Chemical Bath Deposition Method”, Journal of Crystal Growth 299, 2007, pp. 136-141.
Hyun Joo Lee et al., “Deposition and Optical Properties of Nanocrystalline ZnS Thin Films by a Chemical Method”, Current Applied Physics 7, 2007, pp. 193-197.
D. Johnston et al., “Chemical Bath Deposition of Zinc Sulphide Thin Films Using Sodium Citrate as a Complementary Complexing Agent”, Journal of Materials Science Letters 20, 2001, pp. 921-923.
J. M. Dona et al., “Process and Film Characterization of Chemical-Bath-Deposited ZnS Thin Films”, J. Electrochem. Soc., Jan. 1994, pp. 205-209, vol. 141, No. 1.
Notification of Reasons of Rejection dated Jan. 18, 2011, corresponding to JP 2010-130999.
FUJIFILM Corporation
Lee Hsien Ming
Sughrue & Mion, PLLC
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