Bucket brigade device and process

Details Bucket brigade device and process Bucket brigade device and process

1977-06-24

1979-02-27

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 55, 357 91, 307221D, H01L 2978, H01L 2906, G11C 1928

Patent

active

041421990

ABSTRACT:
The invention is the structure and process for making a bucket brigade device which comprises the merger of an MOS capacitor with an MOSFET device to form the charge transfer cell. A thin n-type region is implanted in a portion of the p-type channel region of an FET device adjacent to the drain diffusion. This structure increases the charge transfer efficiency for the cell and reduces its sensitivity of the threshold voltage to the source-drain voltage. The gate for the device has a substantial overlap over the drain and a minimal overlap over the source and the gate to drain capacitance per unit area is maximized by maintaining a uniformly thin oxide layer across the gate region.

REFERENCES:
patent: 3650019 (1972-03-01), Robinson
patent: 3767983 (1973-10-01), Berglund
patent: 3848328 (1974-11-01), Ando et al.
patent: 3874955 (1975-04-01), Arita
patent: 4045810 (1977-08-01), Butler et al.
patent: 4065783 (1977-12-01), Ouyang
patent: 4078947 (1978-03-01), Johnson et al.
Rideout, "Self-Aligned Bucket Brigade Device Structure . . .", IBM Tech. Disclosure Bulletin, vol. 19, (Jun. 1976), pp. 359-361.
Tasch et al., "The Charge-Coupled RAM Cell Concept", IEEE Transactions on Electron Devices, vol. ED-23, (2/76), pp. 126-131.
Abbas et al., "Hot-Carrier Instability in IGFET's", Applied Physics Letters, vol. 27, (Aug. 1, 1975), pp. 147-148.

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