Bucket-brigade delay line having reduced parasitic capacitances

Details Bucket-brigade delay line having reduced parasitic capacitances Bucket-brigade delay line having reduced parasitic capacitances

1975-02-25

1977-01-11

Lovell, C.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, 148188, 357 24, H01L 21225

Patent

active

040025136

ABSTRACT:
An MOS bucket brigade delay line having reduced parasitic capacitances and method for making the same, include a first set of diffused drain source regions in a semiconductor substrate, a thin gate oxide layer overlying said diffused regions, a plurality of gate electrodes having first and second edges, the first edge of each electrode substantially overlapping one of said diffused regions, each of these elements formed in conventional manner. A second set of diffused drain-source regions extends the first set of regions by an amount limited by the second edge of the gate electrodes. The second set of drain source regions is formed by utilizing the gate electrodes as a diffusion mask.

REFERENCES:
patent: 3933529 (1976-01-01), Goser
"Structure & Fabrication of Self-Aligned Bucket Brigade (SABB)", Agusta et al., IBM Tech. Disc. Bull., v. 15, No. 1, June 1972, pp. 12, 13.

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