Bucket brigade charge transfer device with auxiliary gate electr

Details Bucket brigade charge transfer device with auxiliary gate electr Bucket brigade charge transfer device with auxiliary gate electr

1986-01-06

1987-11-24

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Charge transfer device

Compensating for or preventing signal charge deterioration

357 24, G11C 1928, H01L 2978

Patent

active

047093803

ABSTRACT:
A high charge transfer efficiency BBD (bucket brigade device) has an auxiliary gate (M.sub.11, M.sub.12 . . . ) provided in a position next to each transfer gate (11, 12 . . . ) of a charge transfer MOSFET, the auxiliary gate being impressed with a DC bias voltage. A region of higher absolute value of threshold voltage at the auxiliary gate electrode is formed, by making the gate insulation film thereat (241, 242 . . . ) thicker than other parts, or by forming a higher doped island region (211, 212) than the substrate surface under the transfer gate. This enables the attainment of efficient charge transfer by only impressing the same DC bias level on the auxiliary gates (M.sub.11, M.sub.12 . . . ) as the voltage of the clock signal level for the transfer gates (11, 12 . . . ).

REFERENCES:
patent: 3745383 (1973-07-01), Sangster
patent: 3767983 (1973-10-01), Berglund
patent: 4157558 (1979-06-01), Weckler
patent: 4250517 (1981-02-01), Tseng
Sequin et al., Charge Transfer Devices, Academic Press, N.Y. 1975, pp. 30-33.
Barsan et al, "Nonoverlapping Dual-Gate Bucket-Brigade Devices", Appl. Phys. Lett., vol. 36 (15 Feb. 80) pp. 329-331.

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