Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1980-08-25
1982-11-09
Moffitt, James W.
Static information storage and retrieval
Magnetic bubbles
Guide structure
365 15, G11C 1908
Patent
active
043588301
ABSTRACT:
A field-access bubble memory chip has a plurality of permalloy elements overlying an insulating layer. The permalloy elements are configured and positioned to define a plurality of paths for propagating magnetic bubbles under the influence of a Z bias magnetic field and a rotating XY magnetic drive field. A first portion of the paths are located in control function areas of the chip and a second portion of the paths are located in a storage area of the chip. The period of the permalloy elements in the control function areas is substantially greater then the period of the permalloy elements in the storage area. The thickness of the insulating layer immediately beneath the permalloy elements is less in the storage area than in the control function areas. This difference in thickness is sufficient so that the propagation margins for magnetic bubbles in the control function areas and in the storage area are substantially equal. Thus the bit density in the storage area can be significantly increased by reducing the period of the elements therein without any net reduction in the overall margin of the chip.
REFERENCES:
patent: 3921157 (1975-11-01), Sandfort
patent: 3967002 (1976-06-01), Almasi et al.
patent: 4299680 (1981-11-01), Fontana, Jr.
Design and operation of a 550 kbit enhanced density 3 .mu.m bubble memory chip by M. Y. Dimyan and W. C. Hubbell of Texas Instruments Incorporated, Central Research Laboratories, Dallas, TX 75265.
Moffitt James W.
National Semiconductor Corporation
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