Bubble memory optimization by adjusting properties of quartz fil

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204192D, 428433, 428448, 428450, 428457, 428692, 428697, 428702, 428900, B32B 904

Patent

active

042910919

ABSTRACT:
A bubble memory device and method of fabrication are disclosed which establish that there is a correlation between bubble memory performance and the properties of a quartz film, which is interposed between the bubble film and metallic overlays, namely, the permalloy and/or conductor layers of the device. Specifically, it has been established that there is a correlation between improved device performance and a low p-etch rate which is a measurement that establishes certain elastic constants of the quartz (i.e., the response of the device to stress).

REFERENCES:
patent: 4172758 (1979-10-01), Bailey et al.

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