Bubble domain devices using garnet materials with single rare ea

Details Bubble domain devices using garnet materials with single rare ea Bubble domain devices using garnet materials with single rare ea

1973-11-12

1976-04-06

Moffitt, James W.

Communications: electrical

Digital comparator systems

252 6257, G11C 1114

Patent

active

039493865

ABSTRACT:
Bubble domain devices using conventionally known elements for providing a plurality of bubble domain functions, including writing, storage and reading, are provided using a magnetic medium of garnet structure characterized by the presence of a single rare earth ion present in all available dodecahedral lattice sites. These devices operate well over room temperature ranges. This material has sufficiently high anisotropy (of the order 10.sup.5 ergs/cm.sup.3) to support stable magnetic bubble domains in the material. The anisotropy is growth induced and cannot be explained by conventionally accepted theories of anisotropy in garnet bubble domain materials. In preferred embodiments, these rare earth iron garnet films are deposited on suitable substances, which can be any non-magnetic materials having suitable lattice constants to provide substantial lattice match with the magnetic garnet films. Examples are Eu.sub.3 Fe.sub.5 O.sub.12 on Nd.sub.3 Ga.sub.5 O.sub.12 or (Pr,Sm).sub.3 Ga.sub.5 O.sub.12 substrates; and Sm.sub.3 Fe.sub.5 O.sub.12 on (Pr,Nd).sub.3 Ga.sub.5 O.sub.12 substrates.

REFERENCES:
IEEE Transactions on Magnetics, Sept. 1971, pp. 461-463.
IBM Technical Disclosure Bulletin, Vol. 14, No. 7, Dec. 1971, p. 2221.

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