Bubble device fabrication

Details Bubble device fabrication Bubble device fabrication

1978-11-20

1981-06-09

Williams, Howard S.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204192EC, 156643, 156652, 156656, 1566611, 427127, 427130, 427131, 427132, 29604, C23C 1500, C23F 102

Patent

active

042723485

ABSTRACT:
A single level masking process for producing microelectronic structures, such as magnetic bubble domain devices, which require very fine line widths. This is a subtractive dry process using a very thin, additively plated mask in order to obtain optimum lithographic resolution. Use of the very thin plated mask eliminates the need for a thick resist layer which would adversely affect resolution. In one example, a double layer metallurgy comprising a conductor layer (such as Au) and an overlying magnetically soft layer (such as NiFe) is patterned using a thin Ti (or Cr) mask. The Ti mask is subtractively patterned using a NiFe mask which is itself patterned by electroplating through a thin resist layer. The double layer NiFe/Au structure is patterned to provide devices having high aspect ratio, good pattern acuity, and uniform thicknesses, where the minimum feature is 1 micron or less.

REFERENCES:
patent: 3957552 (1976-05-01), Ahn et al.
patent: 4098917 (1978-04-01), Bullock et al.
patent: 4172758 (1979-10-01), Bailey et al.
H. W. Lehmann et al., Applied Physics Letters, 32(3), Feb. 1, 1978, p. 163.
R. F. Bailey et al., Solid State Technology, Sep. 1976, p. 74.
E. G. Spencer et al., The Journal of Vacuum Science and Technology, vol. 8, No. 5, pp. S52-S70, 1971.
M. Cantagrel et al., Journal of Materials Science, vol. 8, pp. 1711-1716, 1973.
G. Gloersen, J. Vac. Sci. Technol., vol. 12, No. 1, Jan./Feb. 1975, pp. 28-35.

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