BST integration using thin buffer layer grown directly onto...

Details BST integration using thin buffer layer grown directly onto... BST integration using thin buffer layer grown directly onto...

2008-07-22

2008-07-22

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C438S048000

Reexamination Certificate

active

11230100

ABSTRACT:
A BST microwave device includes a substrate and an insulating layer that is formed on the substrate. A buffer layer is formed on the insulating layer. A BST layer is formed on the buffer layer with a selected orientation for high tunability and possesses a low loss in a wavelength of interest.

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