BST integration using thin buffer layer grown directly onto...

Details BST integration using thin buffer layer grown directly onto... BST integration using thin buffer layer grown directly onto...

2008-07-22

2008-07-22

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C438S048000

Reexamination Certificate

active

07402853

ABSTRACT:
A BST microwave device includes a substrate and an insulating layer that is formed on the substrate. A buffer layer is formed on the insulating layer. A BST layer is formed on the buffer layer with a selected orientation for high tunability and possesses a low loss in a wavelength of interest.

REFERENCES:
patent: 6045932 (2000-04-01), Jia et al.
patent: 6764864 (2004-07-01), Li et al.
patent: 2001/0044164 (2001-11-01), Jaing et al.
patent: 2001/0054748 (2001-12-01), Wikborg et al.
patent: 2003/0022030 (2003-01-01), Chang
patent: 2003/0136998 (2003-07-01), Baniecki et al.
patent: 2004/0017270 (2004-01-01), Nagra et al.
patent: 2004/0028838 (2004-02-01), Chang
patent: 2004/0069991 (2004-04-01), Dunn et al.
patent: 2004/0183624 (2004-09-01), Liang et al.
patent: 2006/0035023 (2006-02-01), Chang
patent: 2006/0082423 (2006-04-01), Kim et al.
Fenner, D.B. et al, “Reactions at the interfaces of thin films of Y-Ba-Cu and Zr-oxides with Si substrates,” American Institute of Physics, Feb. 15, 1991, pp. 2176-2182.
Bae, S-Y et al., “Magnetic Properties of sol-gel derived Ni-Zn ferrite thin films on yttria stabilized zirconia buffered Si (10).” Journal of Applied Physics, vol. 85 No. 8, Apr. 15, 1999, pp. 5226-5228.
Honstu, S. et al., YBa2Cu3O7-y microbridges on Y2O3/yttria-stabalized zirconia/SiO2/Si(100). 1992 American Institute of Physics. Appl. Phys. Lett. 61 (22), Nov. 30, 1992, pp. 2709-2711.
Cole et al., “Evaluation of Ta2O5 as a buffer layer film for integration of microwave tunable Bal-xSrxTiO3 based thin films with silicon substrates” Journal of Applied Physics, vol. 92, No. 7, Oct. 1, 2002, pp. 3967-3973.
Sungjin et al., “Dielectric properties of strained (Ba, Sr) TiO3 thin films epitaxially grown on Si with thin film yttria-stabalized zirconia buffer layer” Applied Physics Letters, American Institute of Physics, vol. 78, No. 17, Apr. 23, 2001, pp. 2542-2544.
Database Inspection, The Institute of Electrical Engineers, Stevange GB, Inspec. No. AN7192407, Mar. 2001, Nagel et al., “Three Dimensional (Ba, Sr) TiO3 stack capacitors for DRAM application” XP002360199 (Abstract).
Kim et al., “Epitaxial BaxSr1-xTiO3 Thin Films For Microwave Phase Shifters” Microwave Conference 2000, Dec. 3, 2000, pp. 934-937.
Lee et al., “Electrical Properties of SRB12TA209/Insulators/SI Structures with Various Insulators” Japanese Journal of Applied Physics vol. 38, Part I No. 4A, Apr. 1999, pp. 2039-22043.
Basit et al., “Growth of highly oriented Pb(Zr, Ti) O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors” American Institute of Physics, Applied Physics Letters, vol. 73, No. 26, Dec. 28, 1998, pp. 3941-3943.

Affiliated with

Also associated with

Rating

BST integration using thin buffer layer grown directly onto... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with BST integration using thin buffer layer grown directly onto..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and BST integration using thin buffer layer grown directly onto... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2764037