Broadband semiconductor optical amplifier structure

Amplifiers – Parametric amplifiers – Semiconductor type

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372 45, 372 49, 372 50, H01S 319

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active

047943467

ABSTRACT:
The broadband semiconductor optical amplifier fabricated in accordance with the teachings of the present invention comprises first and second active semiconductor regions (50, 51) disposed in tandem with each other, and means for injecting current (I.sub.1,I.sub.2) into the first and second active semiconductor regions to provide gain distributions over wavelength regions in the two active semiconductor regions which partially overlap to form a combined gain distribution over a wider range of wavelengths. Anti-reflection coatings (54, 55) are disposed on the extreme ends of the combined structure. Tuneable wavelength selective amplification over the wider range is achieved in various embodiments by including a tunable optical bandpass filter (53) or by including various tunable auxiliary light guiding structures (115, 116; 140; or 450) to which and from which light power is coupled from and to the active semiconductor regions of the amplifier, respectively.

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