Amplifiers – With semiconductor amplifying device – Including push-pull amplifier
Patent
1992-02-21
1994-10-11
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including push-pull amplifier
330292, 330307, H03F 318
Patent
active
053550951
ABSTRACT:
Push-pull complimentary MOSFET devices are formed in a thin active layer between the top surface of a high resistivity silicon wafer and a insulating layer implanted below the top surface. Each MOSFET is composed of a plurality of cells each having a source, a gate, and a drain region extending fully through the active layer. Grooves extending through the wafer are lined with vias which connect the source regions with a floating ground plane on the bottom of the wafer. The gates of all the cells are connected by a gate bus on the top surface. Air bridges spanning the gates and the source vias connect the drain conductors of each cell. Neutralizing capacitors connected between an input and an opposite output of the push-pull complimentary MOSFET devices match the parasitic capacitances of the devices and provide wide bandwidth amplification with roll off well into the GHz range without the need for tuning inductors.
REFERENCES:
patent: 4647867 (1987-03-01), Butler et al.
Nathanson Harvey C.
Ravas Richard J.
Mottola Steven
Plenart R.
Westinghouse Electric Corp.
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