Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-03-28
2006-03-28
Tran, Thien F. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S015000, C257S017000, C257S018000, C257S021000, C257S022000, C257S082000, C257S085000
Reexamination Certificate
active
07019325
ABSTRACT:
The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor heterostructure forming a PN junction and a waveguide. The semiconductor heterostructure includes a gain region with a contact means for biasing the PN junction so as to produce light emission including stimulated emission from an active zone of the gain region, and in the active zone a plurality of quantum dot layers, each quantum dot layer made up of a plurality of quantum dots and a plurality of adjoining layers, each adjoining layer adjacent to one of said quantum dot layers. The material composition or a deposition parameter of at least two adjoining layers is different. This ensures an enhanced emission spectral width.
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patent: 6184542 (2001-02-01), Alphonse
patent: 2005/0045868 (2005-03-01), Otsubo et al.
High-Performance Quantum-Dot Superluminescent Diodes, Z.Y. Xhang et al., IEEE Photonics Technology Letters, vol. 16 No. 1, Jan. 2004, pp. 27-29.
Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 um applications, J.X. Chen et al., Journal of Applied Physics, vol. 91 No. 10, May 15, 2002, pp. 6710-6716.
Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum, Zhong Zue Sun et al., pp. 1235-1242.
Fiore Andrea
Li Lianhe
Occhi Lorenzo
Velez Christian
Exalos AG
Rankin, Hill Porter & Clark LLP
Tran Thien F.
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