Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2009-09-25
2011-10-11
Bryant, Kiesha (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S444000, C257S458000, C257S461000, C257SE31061
Reexamination Certificate
active
08035184
ABSTRACT:
This invention relates to imaging device and its related transferring technologies to independent substrate able to attain significant broadband capability covering the wavelengths from ultra-violet (UV) to long-Infrared. More particularly, this invention is related to the broadband image sensor (along with its manufacturing technologies), which can detect the light wavelengths ranges from as low as UV to the wavelengths as high as 20 μm covering the most of the wavelengths using of the single monolithic image sensor on the single wafer. This invention is also related to the integrated circuit and the bonding technologies of the image sensor to standard integrated circuit for multicolor imaging, sensing, and advanced communication. Our innovative approach utilizes surface structure having more than micro-nano-scaled 3-dimensional (3-D) blocks which can provide broad spectral response. Utilizing multiple micro-nano scaled blocks help to increase the absorption spectra more than the material used as the absorption layer. In addition, utilizing the multiple nano-scaled 3-D blocks help to increase the absorption over the wavelength due to the multiple reflections and diffractions inside the 3-D structures. The absorption layers will be designed to achieve the required quantum efficiency and also required speed.
REFERENCES:
patent: 2006/0207647 (2006-09-01), Tsakalakos et al.
patent: 2007/0012354 (2007-01-01), Kobayashi et al.
patent: 2008/0083963 (2008-04-01), Hsu et al.
Dutta Achyut Kumar
Olah Robert
Banpil Photonics, Inc.
Bryant Kiesha
Wright Tucker
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