Broadband high power IMPATT amplifier circuit

Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling

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Details

330 56, 331101, 331107C, H03F 360

Patent

active

046238492

ABSTRACT:
An IMPATT diode mounted in a double-tuned resonant cavity to exhibit stability by suppressing subharmonic frequencies is disclosed. A foreshortened quarter wavelength section is connected to the diode to form an equivalent parallel resonant circuit at one end thereof. At the other end of the quarter wavelength section is an odd-quarter wavelength tuning slug which provides a section which exhibits a second, series equivalent resonant circuit. To provide increased stability at subharmonic frequencies, a half-wavelength tuning slug is disposed adjacent to the odd-quarter wavelength section. The half wave tuning slug is virtually transparent at the operating frequency, but is a quarter-wavelength at the first subharmonic, and thus exhibits a high resistance at the subharmonic frequency.

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