Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1987-02-25
1988-06-28
LaRoche, Eugene R.
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330 54, H03F 360
Patent
active
047542349
ABSTRACT:
A broadband distributed amplifier comprised of a plurality of field effect transistors whose gates are connected to junctions between serially-connected inductors forming a gate transmission line, whose drains are connected to junctions between serially-connected inductors forming a drain transmission line, and whose sources are connected to ground. The distribution of the amplifier stages along the gate and drain transmission lines is effected such that these transmission lines are periodically loaded by their own impedances and by the transistor gate and drain capacitances, thus forming artificial lines, and such that a microwave frequency input signal applied to the input of the gate transmission line effects the production of an amplified microwave frequency output signal at the output of the drain transmission line. The gate and drain transmission line output and input, respectively, are terminated by loads. The drain transmission line input only includes biasing means, whereas the gate transmission line output includes means for compensating for the characteristic impedance variations of the artificial line as a function of the frequency.
REFERENCES:
patent: 4486719 (1984-12-01), Ayasli
patent: 4543535 (1985-09-01), Ayasli
patent: 4564817 (1986-01-01), Gilson et al.
Kraus Robert J.
LaRoche Eugene R.
Mottola Steven J.
U.S. Philips Corporation
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