Broad range ion implanter

Details Broad range ion implanter Broad range ion implanter

1997-05-14

1999-05-25

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250423R, H01J 37147

Patent

active

059071583

ABSTRACT:
Ion implanter having at least two independent ion generating systems coupled to a single scanning end station. In a preferred embodiment one of the ion generating systems generates ions approximately in the 3-80 keV range and the other system generates ions approximately in the 80-3,000 keV range. The scanning end station may be employ magnetic, electrostatic, or mechanical scanning. This invention has particular relevance for the controlled doping of semiconducting materials and flat panel displays units in which doping may be needed for the production of micro-electronic devices, the sub-circuit crystal damage that is useful for gettering unwanted impurity atoms and for the development of etch pits in flat panel displays. The disclosed apparatus makes possible a variety of chained implants at different energies using the same mask.

REFERENCES:
patent: 5003183 (1991-03-01), Nogami et al.
patent: 5196706 (1993-03-01), Keller et al.
patent: 5315118 (1994-05-01), Mous
patent: 5399871 (1995-03-01), Ito et al.
patent: 5483077 (1996-01-01), Glavish

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