Broad energy-range ribbon ion beam collimation using a...

Radiant energy – With charged particle beam deflection or focussing – Magnetic lens

Reexamination Certificate

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C250S492100, C250S492210, C250S492300, C250S3960ML, C335S213000

Reexamination Certificate

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07829866

ABSTRACT:
A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.

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Optics of Charged Particles; Hermann Wollnik; 6-pp. 282-287.

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