Broad beam ion implanter

Details Broad beam ion implanter Broad beam ion implanter

1995-02-17

1996-10-08

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504923, H01J 37317

Patent

active

055634184

ABSTRACT:
An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes.

REFERENCES:
patent: 4757208 (1988-07-01), McKenna et al.
patent: 5350926 (1994-09-01), White et al.
patent: 5352899 (1994-10-01), Golovanivsky et al.

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