Broad-band quantum well infrared photodetectors

Details Broad-band quantum well infrared photodetectors Broad-band quantum well infrared photodetectors

2005-11-15

2005-11-15

Wille, Douglas A. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S440000

Reexamination Certificate

active

06965152

ABSTRACT:
A quantum well can be designed to detect light of a particular wavelength by tailoring the potential depth and width of the well. The design produces two energy states in the well separated by the desired photon energy. The GaAs/AlxGa1-xAs material system allows the quantum well shape to be varied over a range wide enough to enable light detection at wavelengths longer than approximately 6 μm. Hence, large bandgap materials such as GaAs/AlxGa1-xAs material has made fabrication of a large focal plane arrays tuned to detect light at wavelengths from 6 to 25 μm possible.

REFERENCES:
patent: 4903101 (1990-02-01), Maserjian
patent: 5013918 (1991-05-01), Choi
patent: 5036371 (1991-07-01), Schwartz
patent: 5198659 (1993-03-01), Smith et al.
patent: 5539206 (1996-07-01), Schimert
patent: 5646421 (1997-07-01), Liu
patent: 0509247 (1992-10-01), None
Khanna et al., High Energy Proton and Alpha Radiation Effects on GaAs/AlGaAs Quantum Well Infrared Photodetectors. Dec. 1996, IEEE Trans. on Nuc. Sci., V43, pp 3012-3018.

Affiliated with

Also associated with

Rating

Broad-band quantum well infrared photodetectors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Broad-band quantum well infrared photodetectors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Broad-band quantum well infrared photodetectors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3488657