Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1996-12-23
1998-10-20
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 37302
Patent
active
058250409
ABSTRACT:
A method and apparatus for bonding a layer of coating material onto a subate with minimal bulk heating of the substrate. A pulsed electron beam generator is used to produce high energy electrons at the beginning of the pulse and a larger number of lower energy electrons at the end of the pulse. A thin sacrificial or ablative layer of an easily-vaporized material such as tin is placed on top the coating. The high energy electrons penetrate through the ablative and coating layers. The ablative layer is heated to a molten state, causing it to vaporize. The ablation process generates a force on the coating layer which drives it into the substrate.
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Marrian Christie R. K.
Peckerar Martin C.
Karasek John
McDonnell Thomas
Nguyen Kiet T.
The United States of America as represented by the Secretary of
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