Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device
Patent
1997-02-07
1998-10-06
Hoang, Huan
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Utilizing three or more electrode solid-state device
327423, 257122, 257124, H03K 1756
Patent
active
058182829
ABSTRACT:
A field relaxation region of the second conductivity type is formed between the base region and a drain electrode contact portion at which the drain region contacts with a drain electrode but distanced from both the base region and the drain electrode contact portion and the field relaxation region is also separated via the drain region from the laterally extending portion of the semiconductor isolation region to form a drain current channel region between the field relaxation region and the laterally extending portion of the semiconductor isolation region and further the field relaxation region is electrically connected via an interconnection to the source region and the vertically extending portion of the semiconductor isolation region so that the field relaxation region and the semiconductor isolation region have the same potential as the source region whereby if the lateral MOS field effect transistor is reverse-biased by a voltage, then a first space charge region is formed which extend from a first p-n junction surface between the laterally extending portion of the semiconductor isolation region and the drain current channel region of the drain region toward the drain current channel region and a second space charge region is formed which extend from a second p-n junction surface between the field relaxation region and the drain current channel region of the drain region toward the drain current channel region for causing the first and second space charge regions to contact with each other to pinch the drain current channel region off.
REFERENCES:
patent: 4760434 (1988-07-01), Tsuzuki et al.
patent: 5464993 (1995-11-01), Zambrano et al.
patent: 5608235 (1997-03-01), Pezzani
Hoang Huan
NEC Corporation
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