Breakdown voltage resistor obtained through a double ion-implant

Details Breakdown voltage resistor obtained through a double ion-implant Breakdown voltage resistor obtained through a double ion-implant

1979-11-19

1981-11-03

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 13, 357 91, H01L 322, H01L 21265, H01L 2990

Patent

active

042984017

ABSTRACT:
An implanted resistor structure for semiconductor integrated circuit devices is formed by a double ion-implantation providing a high breakdown voltage resistor.

REFERENCES:
patent: 3390019 (1968-06-01), Manchester
patent: 3548269 (1970-12-01), MacDougall et al.
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patent: 3920493 (1975-11-01), Kravitz
patent: 3947866 (1976-03-01), Stellrecht
patent: 4104085 (1978-08-01), Zandveld
patent: 4119440 (1978-10-01), Hile
patent: 4125415 (1978-11-01), Clark
patent: 4126496 (1978-11-01), Verderber
patent: 4136349 (1979-01-01), Tsang
patent: 4155777 (1979-05-01), Dunkley et al.
Zandveld, P., Solid St. Electronics, 19 (1976), 659.
Alcorn et al., IBM-TDB, 22 (Oct. 1979), 1973.
Lebesnerais et al., IBM-TDB, 20 (1974), 1471.
Putney, Z. C., "Simultaneous Formation of High Sheet Resistance . . . ", IBM TDB, vol. 20, No. 10, Mar. 1978, pp. 4011-4012.

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