Breakdown voltage adjustment for bipolar transistors

Details Breakdown voltage adjustment for bipolar transistors Breakdown voltage adjustment for bipolar transistors

2006-05-02

2006-05-02

Kennedy, Jennifer (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming base region of specified dopant concentration profile

C438S312000, C438S314000, C438S320000, C438S342000

Reexamination Certificate

active

07037799

ABSTRACT:
Devices and methods are disclosed related to a bipolar transistor device and methods of fabrication. A top region is formed at a surface of and within a base region. The top region is formed by implanting a dopant of an opposite conductivity to that of the base region. However, the top region remains of the same conductivity type as the base region (e.g., n-type or p-type). This implanting, also referred to as counterdoping, increases resistivity of the top region and thus improves an emitter-base breakdown voltage. Additionally, this implanting does not have a substantial detrimental affect on a beta value, also referred to as an amplification property, or a collector emitter breakdown voltage, also referred to as BVceo, for the transistor. The beta value and the collector emitter breakdown voltage are mainly a function of a bottom portion of the base region.

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