Breakage resistant V-grooved <100> silicon substrates

Details Breakage resistant V-grooved <100> silicon substrates Breakage resistant V-grooved <100> silicon substrates

1979-05-25

1980-10-21

Smith, John D.

Stock material or miscellaneous articles

Structurally defined web or sheet

Including variation in thickness

29413, 29580, 148 332, 357 54, 357 55, 357 59, 428167, 428173, H01L 21302, H01L 21314

Patent

active

042294746

ABSTRACT:
Flat and parallel depositions of low pressure chemical vapor deposited (LPCVD) polycrystalline intrinsic silicon are formed on both sides of a wafer of P-I-N <100> substrate of silicon to support the wafer during subsequent polish removal from the top surface. This structurally reinforces the crystal wafer and helps prevent warpage and cracking during subsequent handling.

REFERENCES:
patent: 3806771 (1974-04-01), Petruzella
patent: 3892608 (1975-07-01), Kuhn
patent: 3997964 (1976-12-01), Holbrook et al.
patent: 4086613 (1978-04-01), Biet et al.
patent: 4096619 (1978-06-01), Cook

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