Break-over photodiode

Details Break-over photodiode Break-over photodiode

1997-02-06

1998-07-14

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With light activation

257114, 257144, 257153, 257462, H01L 2974

Patent

active

057808775

ABSTRACT:
A break-over photodiode, designed as a light-sensitive thyristor, can be stacked using a series connection with a plurality of break-over photodiodes, such stacking representing a high-voltage break-over diode. The break-over photodiode can be triggered by lateral illumination in an edge zone, and includes a gate-layer resistivity under the emitter which is greater in an edge zone of the break-over photodiode than in the central zone of the break-over photodiode. The light sensitivity of the laterally illuminatable break-over photodiode is increased by a greater gate-layer resistivity in the edge zone as compared to the central zone.

REFERENCES:
patent: 4587546 (1986-05-01), Herberg

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