Brazed glass pre-passivated chip rectifier

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Details

357 72, 357 73, 357 79, H01L 2328, H01L 2330

Patent

active

049874764

ABSTRACT:
A semiconductor device is fabricated by applying a glass layer of material over a junction area of a semiconductor die. Aluminum metalization layers are applied to the top and bottom of the die at locations spaced from the glass and are used for a high temperature brazing of contact members to the die. Etching of the die, plus unavoidable etching of the contact members, is conducted without contamination of the junction area.

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