Patent
1990-02-14
1991-01-22
James, Andrew J.
357 72, 357 73, 357 79, H01L 2328, H01L 2330
Patent
active
049874764
ABSTRACT:
A semiconductor device is fabricated by applying a glass layer of material over a junction area of a semiconductor die. Aluminum metalization layers are applied to the top and bottom of the die at locations spaced from the glass and are used for a high temperature brazing of contact members to the die. Etching of the die, plus unavoidable etching of the contact members, is conducted without contamination of the junction area.
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General Instrument Corporation
James Andrew J.
Nguyen Viet Q.
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