Branching RF antennas and plasma processing apparatus

Details Branching RF antennas and plasma processing apparatus Branching RF antennas and plasma processing apparatus

2005-03-22

2005-03-22

Lee, Wilson (Department: 2821)

Coating apparatus

Gas or vapor deposition

With treating means

C315S111510, C118S725000, C156S922000

Reexamination Certificate

active

06868800

ABSTRACT:
The inductively coupled plasma source and antenna geometry are significant factors in determining plasma and process uniformity inside the chamber. Growing demands for processing larger and larger wafers or LCD substrates and providing higher and higher degrees of plasma uniformity challenge the current ICP type antenna designs and push development of sources. Branching RF antenna, featuring a plurality of major and minor branches, provides improved coverage of processing area, reduced standing wave effect, improved uniformity of inductively coupled electromagnetic field, more uniform plasma production, and more homogeneous processing conditions throughout the whole processing area.

REFERENCES:
patent: 3916034 (1975-10-01), Tsuchimoto
patent: 6101970 (2000-08-01), Koshimizu
patent: 6179924 (2001-01-01), Zhao et al.

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