Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular power supply distribution means
Reexamination Certificate
2003-05-09
2004-12-28
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular power supply distribution means
C257S208000
Reexamination Certificate
active
06835972
ABSTRACT:
BACKGROUND
The present invention generally relates to power mesh schemes for a wire bond package. More specifically, the invention relates to a new mesh structure to support an L-shaped mesh structure and a T-shaped mesh structure which is an improvement to the L-shaped mesh structure.
As shown in
FIG. 1
, an L-shaped mesh structure
10
is used in connection with a vertical mesh structure
12
. The L-shaped mesh structure
10
includes L-shaped power rails
14
arranged in quadrants of the mesh structure
10
. An upper left quadrant
18
, a upper right quadrant
20
, a lower left quadrant
22
, and a lower right quadrant
24
comprise the quadrants of the L-shaped mesh structure
10
. Each L-shaped power rail
14
includes a vertical portion
14
a
and a horizontal portion
14
b
. This L-shaped mesh structure
10
realizes symmetrical current distributions even though only one layer is available for power distribution. To power the horizontal power rails, however, vertical trunks traversing the length of the die need to be inserted at a fixed pitch. Thus, the vertical mesh
12
which includes vertical power rails
26
is used in connection with the L-shaped mesh structure
10
.
The center region of the L-shaped mesh structure is shown in FIG.
2
. As shown in
FIG. 2
, an inner most VDD rail
28
positioned in the upper left quadrant
18
lies proximate to an inner most VDD rail
32
positioned in the lower left quadrant
22
. Also an inner most VSS rail
30
positioned in the upper right quadrant
20
lies proximate an inner most VSS rail
34
positioned in the lower right quadrant
24
. As a result, the distance, represented by the arrow
36
, between the inner most VSS rail
38
of the upper left quadrant
18
and the inner most VSS rail
40
of the lower left quadrant
22
, exceeds 200 &mgr;m. Likewise, the distance, represented by the arrow
42
, between the inner most VDD rail
44
of the upper right quadrant
20
and the inner most VDD rail
46
of the lower right quadrant
24
, exceeds 200 &mgr;m. These large distances will result in EM violations unless the number of vias is increased. Increasing the number of vias, however, is not a desired approach because it results in the sacrifice of area.
OBJECTS AND SUMMARY
A general object of an embodiment of the present invention is to provide a power mesh design which includes a bow tie shaped mesh.
Another object of the present invention is to reduce the number of vias which extend from the mesh structure.
Yet another object of the present invention is to increase the routing area available on the structure.
Still another object of the present invention is to provide a mesh design which includes a T-shaped mesh.
Briefly, and in accordance with at least one of the foregoing objects, an embodiment of the present invention provides a bow tie shaped mesh for use in connection with an L-shaped mesh. The present invention also provides a T-shaped power mesh structure which provides advantages over the L-shaped power mesh structure.
REFERENCES:
patent: 5311058 (1994-05-01), Smolley
patent: 5969420 (1999-10-01), Kuge et al.
patent: 6194768 (2001-02-01), Gardner et al.
patent: 6476497 (2002-11-01), Waldron et al.
patent: 2003/0237059 (2003-12-01), Schultz
Antisseril Thomas
Ishikawa Hiroshi
Molina Ruben
Ratchkov Radoslav
Shen Bo
Loke Steven
LSI Logic Corporation
Trexler Bushnell Giangiorgi & Blackstone Ltd.
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