Boundary layer type semiconducting ceramic capacitors with high

Details Boundary layer type semiconducting ceramic capacitors with high Boundary layer type semiconducting ceramic capacitors with high

1980-10-02

1983-09-06

Edlow, Martin H.

Compositions

Radioactive compositions

Nuclear reactor fuel

357 61, 252520, 252500, 252 623BT, H01L 2912

Patent

active

044032366

ABSTRACT:
A boundary layer type semiconducting ceramic capacitor with high capacitance is disclosed. The capacitor comprises a semiconducting ceramic body in which grain boundaries on crystal grains of the semiconducting ceramic body are insulated, characterized in that said semiconducting ceramic body has a composition consisting essentially of 98.1 to 99.88 mole % of a main component (Sr.sub.1-x Ba.sub.x)Tio.sub.3 or (Sr.sub.1-x Ba.sub.x)TiO.sub.3 modified with a titanete and/or a zirconate, wherein x is a mole fraction of Ba and takes a value ranging from 0.30 to 0.50, and 0.1 to 1.0 mole % of at least one semiconductorizing agent selected from the group consisting of rare earth elements, Nb, Ta and W, and that said grain boundaries of the crystal grains are insulated by at least one insulating agent selected from the group consisting of Mn, Bi, Cu, Pb, B and Si, and that the maximum crystal grain present in the semiconducting ceramic body has a grain size ranging from 100 to 250.mu.. The composition contains 0.02 to 0.2 mole % of Mn as a mineralizing agent or insulating agent. The composition may further contain at least one of 0.05 to 0.5 mole % of SiO.sub.2 and 0.02 to 0.2 mole % of Al.sub.2 O.sub.3.

REFERENCES:
patent: 4143207 (1979-03-01), Itakura
patent: 4222783 (1982-09-01), Atsumi

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