Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2010-09-29
2011-12-27
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S072000, C257S347000
Reexamination Certificate
active
08084771
ABSTRACT:
A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 1020atoms/cm3and 1025atoms/cm3. A method of fabricating a bottom-gate thin film transistor is also disclosed herein.
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English language translation of abstract of H05-283693 (published Oct. 29, 1993).
English language translation of abstract of H08-228011 (published Sep. 3, 1996).
English language translation of abstract of H08-321618 (published Dec. 3, 1996).
Chen Chih-Hsien
Huang Kun-Fu
Lin Han-Tu
Peng Ya-Hui
Tseng Yi-Ya
Au Optronics Corporation
Luu Chuong A.
Thomas Kayden Horstemeyer & Risley LLP
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