Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure
Reexamination Certificate
2007-07-22
2009-12-15
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
In integrated structure
C257S054000, C257S155000, C257S260000, C257S267000, C257S280000, C257S281000, C257S284000, C257S449000, C257S453000, C257S454000, C257S471000, C257SE27040, C257SE27068, C257SE29041, C257SE29338, C257SE31065, C257SE31066
Reexamination Certificate
active
07633135
ABSTRACT:
This invention discloses a bottom-anode Schottky (BAS) diode that includes an anode electrode disposed on a bottom surface of a semiconductor substrate. The bottom-anode Schottky diode further includes a sinker dopant region disposed at a depth in the semiconductor substrate extending substantially to the anode electrode disposed on the bottom surface of the semiconductor and the sinker dopant region covered by a buried Schottky barrier metal functioning as an Schottky anode. The BAS diode further includes a lateral cathode region extended laterally from a cathode electrode near a top surface of the semiconductor substrate opposite the Schottky barrier metal wherein the lateral cathode region doped with an opposite dopant from the sinker dopant region and interfacing the sinker dopant region whereby a current path is formed from the cathode electrode to the anode electrode through the lateral cathode region and the sinker dopant region in applying a forward bias voltage and the sinker dopant region depleting the cathode region in applying a reverse bias voltage for blocking a leakage current.
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Alpha & Omega Semiconductor Ltd.
Lin Bo-In
Soward Ida M
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