Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2008-04-29
2008-04-29
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S080000, C257S094000
Reexamination Certificate
active
10540995
ABSTRACT:
A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a first region and a second region different from the first region; a boron phosphide-based semiconductor amorphous layer formed on said first region of said first semiconductor layer, said boron phosphide-based semiconductor amorphous layer including a high-resistance boron phosphide-based semiconductor amorphous layer or a first boron phosphide-based semiconductor amorphous layer having a conduction type opposite to that of said first semiconductor layer; a pad electrode formed on said high-resistance or opposite conductivity-type boron phosphide-based semiconductor amorphous layer for establishing wire bonding; and a conductive boron phosphide-based crystalline layer formed on said second region of said first semiconductor layer, said conductive boron phosphide-based crystalline layer extending optionally to a portion of said boron phosphide-based semiconductor amorphous layer, wherein said pad electrode is in contact with said boron phosphide-based semiconductor crystalline layer at a portion of said pad electrode above the bottom of said pad electrode.
REFERENCES:
patent: 6069021 (2000-05-01), Terashima et al.
patent: 6730987 (2004-05-01), Udagawa
patent: 6797990 (2004-09-01), Udagawa
patent: 6936863 (2005-08-01), Udagawa et al.
patent: 6984851 (2006-01-01), Udagawa
patent: 7030003 (2006-04-01), Udagawa
patent: 2002/0000563 (2002-01-01), Udagawa
patent: 2003/0001162 (2003-01-01), Udagawa
patent: 2003/0047795 (2003-03-01), Udagawa
patent: 2003/0234400 (2003-12-01), Udagawa
patent: 2004/0169180 (2004-09-01), Udagawa
patent: 2004/0169184 (2004-09-01), Udagawa et al.
patent: 2006/0163588 (2006-07-01), Udagawa
patent: 2007/0152232 (2007-07-01), Kobayakawa et al.
patent: 2007/0259510 (2007-11-01), Udagawa
patent: 0 395 392 (1990-10-01), None
patent: 2-288388 (1990-11-01), None
patent: 10-242567 (1998-09-01), None
patent: 2004047847 (2004-02-01), None
patent: WO 2004061981 (2004-07-01), None
Patent Abstracts of Japan vol. 1998, No. 01, Jan. 30, 1998 & JP 09-232685 A (Toshiba Corp), Sep. 5, 1997.
Journal of the Japanese Association for Crystal Growth, vol. 24, No. 2, P150, (1974), abstract.
K. Shohno, et al, “Epitaxial Growth of BP Compounds on Si Substrates Using the B2H6-PH3-H2System” Journal of Crystal Growth, vol. 24/25, 1974, pp. 193-196.
Y. Kumasiro, et al, “Preparation and Electrical Properties of Boron and Boron Phosphide Films Obtained By Gas Source Molecular Beam Deposition”, Journal of Solid State Chemistry, vol. 133, 1997, pp. 269-272.
T. Izumiya, et al, “Growth of BP and GaN/BP Heterostructures”, Inst. Phys. Conf. Ser., No. 129 Chapter 3, (IOP Publicshing LTD . . . UK), pp. 157-162 (1992).
Schillinger Laura M.
Showa Denka K.K.
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