Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-08-30
2005-08-30
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S076000, C257S096000, C257S615000, C438S047000
Reexamination Certificate
active
06936863
ABSTRACT:
A boron phosphide-based semiconductor light-emitting device, which device includes a light-emitting member having a hetero-junction structure in which an n-type lower cladding layer formed of an n-type compound semiconductor, an n-type light-emitting layer formed of an n-type Group III nitride semiconductor, and a p-type upper cladding layer provided on the light-emitting layer and formed of a p-type boron phosphide-based semiconductor are sequentially provided on a surface of a conductive or high-resistive single-crystal substrate and which device includes a p-type Ohmic electrode provided so as to achieve contact with the p-type upper cladding layer, characterized in that a amorphous layer formed of boron phosphide-based semiconductor is disposed between the p-type upper cladding layer and the n-type light-emitting layer. This boron phosphide-based semiconductor light-emitting device exhibits a low forward voltage or threshold value and has excellent reverse breakdown voltage characteristics.
REFERENCES:
patent: 3022452 (1962-02-01), Williams et al.
patent: 3054936 (1962-09-01), Williams et al.
patent: 5042043 (1991-08-01), Hatano et al.
patent: 6831293 (2004-12-01), Udagawa
patent: 2004/0183089 (2004-09-01), Udagawa
patent: 49-19782 (1974-02-01), None
patent: 53-20882 (1978-02-01), None
patent: 2-288388 (1990-11-01), None
patent: 6-260680 (1994-09-01), None
patent: 10-242569 (1998-09-01), None
patent: 11-40890 (1999-02-01), None
patent: 2000-133884 (2000-05-01), None
patent: 2001-168395 (2001-06-01), None
patent: 2002-270896 (2002-09-01), None
patent: 2002-368260 (2002-12-01), None
patent: 2003-23181 (2003-01-01), None
Japanese Search Report for PCT/JP03/14597 dated Jan. 20, 2004 (Japanese language).
P. Popper, et al.; “Boron phosphide, a III-V Compound of Zinc-Blende Structure”; Nature; No. 4569, May 25, 1997, p. 1075.
J. Peret; “Preparation and Properties of the Boron Phosphides”; Journal of the American Ceramic Society, vol. 47, No. 1, Jan. 1964; pp. 44-46.
Takao Takenaka et al.; “Diffusion Layers Formed in Si Substrates during the Epitaxial Growth of BP and Application to Devices”; Journal of Electrochemical Society, vol. 125, No. 4, Apr. 1978, pp. 633-636.
K. Seeger; “Semiconductor Physics, An Introduction”; Fourth Edition, Springer-Verlag Heidelberg, 1989.
K. Shohno; “Semiconductor Techniques”, 9th issue, University of Tokyo Press, pp. 74-77.
T. Izumiya; “Growth of BP and GaN/BP heterostructures”; Phys. Conf. Ser., No., 129, 1993, pp. 157-162.
I. Akasaki; “Group III-V Compound Semiconductor”; Baifukan Co., Ltd., first edition, Chapter 13.
K. Shohno, et al.; “Epitaxial Growth of BP Compounds on Si Substrates Using the B2H6-PH3-H2System”; Journal of Crystal Growth, 24/25, 1974, pp. 193-196.
“Epitaxial Growth of BP Single Crystal”; Shonan Institute of Technology, 24aB11, p. 150.
Y. Kumasiro, et al.; “Preparation and Electrical Properties of Boron and Boron Phosphide Films Obtained by Gas Source Molecular Beam Deposition”; Journal of Solid State Chemistry, vol. 133, 1997, pp. 269-272.
I. Akasaki; “Group III Nitride Semiconductor”; Baifukan Co., Ltd., first edition, Chapters 13 and 14.
Kasahara Akira
Udagawa Takashi
Landau Matthew C
Showa Denko K.K.
Thomas Tom
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