Boron phosphide-based semiconductor device, production...

Details Boron phosphide-based semiconductor device, production... Boron phosphide-based semiconductor device, production...

2003-01-28

2008-12-16

Shosho, Callie (Department: 1794)

Stock material or miscellaneous articles

Composite

Of silicon containing

C117S088000, C117S089000, C117S104000, C117S105000, C257S094000, C257S096000, C257S183000, C257S189000, C257S200000, C438S046000, C438S047000, C438S604000

Reexamination Certificate

active

07465499

ABSTRACT:
A boron phosphide-based semiconductor device enhanced in properties includes a substrate (11) composed of a {111}-Si single crystal having a surface {111} crystal plane and a boron phosphide-based semiconductor layer formed on the surface of the substrate and composed of a polycrystal layer (12) that is an aggregate of a plurality of a triangular pyramidal single crystal entities (13) of the boron phosphide-based semiconductor crystal, where in each single crystal entity has a twining interface that forms an angle of 60° relative to a <110> crystal direction of the substrate.

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International Search Report for PCT/JP03/00798 dated Apr. 23, 2004.

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