Stock material or miscellaneous articles – Composite – Of b – n – p – s – or metal-containing material
Reexamination Certificate
2006-03-28
2006-03-28
Stein, Stephen (Department: 1775)
Stock material or miscellaneous articles
Composite
Of b, n, p, s, or metal-containing material
C428S688000, C257S102000, C257S103000, C257S190000, C438S565000, C438S566000, C438S569000, C438S935000
Reexamination Certificate
active
07018728
ABSTRACT:
A boron phosphide-based semiconductor device includes a single crystal substrate having formed thereon a boron-phosphide (BP)-based semiconductor layer containing boron and phosphorus as constituent elements, where phosphorus (P) occupying the vacant lattice point (vacancy) of boron (B) and boron occupying the vacant lattice point (vacancy) of phosphorus are present in the boron-phosphide (BP)-based semiconductor layer. The boron phosphide-based semiconductor device includes a p-type boron phosphide-based semiconductor layer in which boron occupying the vacancy of phosphorus is contained in a higher atomic concentration than phosphorus occupying the vacancy of boron and a p-type impurity of Group II element or Group I V element is added.
REFERENCES:
patent: 3877060 (1975-04-01), Shono et al.
patent: 4214926 (1980-07-01), Katsuto et al.
patent: 5042043 (1991-08-01), Hatano et al.
patent: 6069021 (2000-05-01), Terashima et al.
patent: 27 29 889 (1978-01-01), None
patent: 2729889 (1978-01-01), None
patent: 53-4466 (1978-01-01), None
patent: 53-4467 (1978-01-01), None
patent: 53-108277 (1978-09-01), None
patent: 54-52464 (1979-04-01), None
patent: 2-275682 (1990-11-01), None
patent: 10-242567 (1998-09-01), None
patent: 11-266006 (1999-09-01), None
patent: 2000-22211 (2000-01-01), None
patent: 2000-31164 (2000-01-01), None
patent: 2000-51270 (2000-02-01), None
patent: 2000-235956 (2000-08-01), None
Toshiaki Ikoma, et al., Kagobutsu Handotai no Kiso Bussei Nyumon (Guide for Basic Physical Properties of Compound Semiconductor), 1sted., pp. 14-17, Baifukan (Sep. 10, 1991).
Iwao Teramoto, Handotai Device Gairon (Introduction to Semiconductor Devices), p. 28, Baifukan (Mar. 30, 1995).
Phillips, Handotai Ketsugo Ton (Bonds and Bands in Semiconductors), 3rdimp., p. 51, Yoshioka Shoten (Jul. 25, 1985).
Katsufusa Shono, Cho LSI Jidai no Handotai Gijutsu 100 Shu (100 Collections of Semiconductors Technique in VLSI Generation) [III], Ohmu Sha (Apr. 1, 1982), Electronics Library 18, pp. 86-87.
Hideaki Ikoma, et al., Kagobutsu Handotai no Kiso Bussei Nyumon (Guide for Basic Physical Properties of Compound Semiconductor), 1sted., p. 141, Baifukan (Sep. 10, 1991).
M.J. Ludowise, Metalorganic chemical vapor deposition of III-V semiconductors, J. Appl. Phys., vol. 58 No. 8, pp. R31-R55 (Oct. 15, 1985).
T.L. Chu, et al., The Crystal Growth of Boron Monophosphide from Metal Phosphide Solutions, J. Electrochem. Soc., vol. 120, No. 6, pp. 802-806 (Jun. 1973).
T. Izumiya, et al., Growth of BP and GaN/BP heterostructures, Inst. Phys. Conf. Ser., No 129, Chapter 3, pp. 157-162, IOP Publishing Ltd. (1993).
Y. Kumashiro, et al., Preparation and Electrical Properties of Boron and Boron Phosphide Films Obtained by Gas Source Molecular Beam Deposition, Journal of Solid State Chemistry, 133, pp. 269-272 (1997).
James L. Peret, et al., Preparation and Properties of the Boron Phosphides, Journal of The American Ceramic Society, vol. 47 No. 1, pp. 44-46 (Jan. 1964).
Y. Kumashiro, et al.; “Boron Phosphide as a Refractory Semiconductor”, Shin-Kinzoku-Kogyo 1989, vol. 34 p. 23-28.
Showa Denko K.K.
Stein Stephen
LandOfFree
Boron phosphide-based semiconductor device and production... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Boron phosphide-based semiconductor device and production..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Boron phosphide-based semiconductor device and production... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3564728