Boron nutride membrane in wafer structure

Details Boron nutride membrane in wafer structure Boron nutride membrane in wafer structure

1991-10-25

1993-12-14

Loney, Donald J.

Stock material or miscellaneous articles

Composite

Of inorganic material

428172, 428192, 428699, 428704, 430 5, 378 34, 378 35, B32B 900, G03F 900

Patent

active

052701255

ABSTRACT:
A laminated structure includes a wafer member with a membrane attached thereto, the membrane being formed of substantially hydrogen-free boron nitride having a nominal composition B.sub.3 N. The structure may be a component in a mechanical device for effecting a mechanical function, or the membrane may form a masking layer on the wafer. The structure includes a body formed of at least two wafer members laminated together with a cavity formed therebetween, with the boron nitride membrane extending into the cavity so as to provide the structural component such as a support for a heating element or a membrane in a gas valve. In another aspect borom is selectively diffused from the boron nitride into a <100> surface of a silicon wafer. The surface is then exposed to EDP etchant to which the diffusion layer is resistant, thereby forming a channel the wafer member with smooth walls for fluid flow.

REFERENCES:
patent: 4868093 (1989-09-01), Levy

Affiliated with

Also associated with

Rating

Boron nutride membrane in wafer structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Boron nutride membrane in wafer structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Boron nutride membrane in wafer structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1703978