Boron nitride X-ray masks with controlled stress

Details Boron nitride X-ray masks with controlled stress Boron nitride X-ray masks with controlled stress

1982-09-09

1985-06-11

Kittle, John E.

Coating processes

Measuring, testing, or indicating

427160, 4272552, 4273722, 430 5, 378 35, B05D 500

Patent

active

045228426

ABSTRACT:
It has been found that stress in X-ray transparent films used to form masks for X-ray lithography also cause distortions of the film and of the high-resolution X-ray-absorptive pattern formed thereon. A method is disclosed which anneals boron nitride films for use in X-ray masks in such a way as to control stress.

REFERENCES:
patent: 3892973 (1975-07-01), Coquin et al.
patent: 4037111 (1977-07-01), Coquin et al.
patent: 4171489 (1979-10-01), Adams et al.
patent: 4253029 (1981-02-01), Lepselter et al.
A. C. Adams et al., "The Chemical Deposition of Boron-Nitrogen Films," J. Electrochemical Society, vol. 127, No. 2, Feb. 1980, pp. 399-405.
Shand, Glass Engineering Handbook, 2nd Ed., McGraw-Hill Book Co., New York, 1958, pp. 106-109.
R. J. Jaccodine et al., "Measurement of Strains at Si-SiO.sub.2 Interface," Journal of Applied Physics, vol. 37, No. 6, May 1966, pp. 2429-2434.

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