Boron nitride membrane in wafer structure and process of forming

Details Boron nitride membrane in wafer structure and process of forming Boron nitride membrane in wafer structure and process of forming

1990-06-21

1991-11-19

Powell, William A.

Stock material or miscellaneous articles

Structurally defined web or sheet

Including variation in thickness

156628, 156647, 156657, 1566591, 156662, 346140R, H01L 21306, B44C 122

Patent

active

050665332

ABSTRACT:
A laminated structure includes a wafer member with a membrane attached thereto, the membrane being formed of substantially hydrogen-free boron nitride having a nominal composition B.sub.3 N. The structure may be a component in a mechanical device for effecting a mechanical function, or the membrane may form a masking layer on the wafer. The structure includes a body formed of at least two wafer members laminated together with a cavity formed therebetween, with the boron nitride membrane extending into the cavity so as to provide the structural component such as a support for a heating element or a membrane in a gas valve. In another aspect borom is selectively diffused from the boron nitride into a <100> surface of a silicon wafer. The surface is then exposed to EDP etchant to which the diffusion layer is resistant, thereby forming a channel the wafer member with smooth walls for fluid flow.

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patent: 4966646 (1990-10-01), Zdeblick
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"An Improved Boron Nitride Technology for Synchrotron X-Ray Masks", by R. A. Levy, D. J. Resnick, R. C. Frye, and A. W. Yanof, J. Vac. Sci. Technol Section B6, 154 (1988).
"Characterization of Noron Nitride Films for Synchroton X-Ray Masks", by R. A. Levy, Proc. Electrochem. Soc. 85-12, (1983).

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