Boron nitride film and process for preparing same

Details Boron nitride film and process for preparing same Boron nitride film and process for preparing same

1984-02-28

1986-01-21

Lesmes, George F.

Stock material or miscellaneous articles

Composite

Of quartz or glass

428698, 428699, 428701, 4272552, B32B 900, B32B 1706, B32B 1900

Patent

active

045657416

ABSTRACT:
A boron nitride (BN) film is disclosed having excellent electrical insulating and heat conduction characteristics and capable of acting as seeds for epitaxially growing a semiconductor film thereon which has a crystallizability sufficient to incorporate a semiconductor element therein. The BN film is formed by the growth on a substrate in a manner to be preferentially orientated to a predetermined axis thereof. A process for preparing such film is also disclosed.

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patent: 4233613 (1980-11-01), Morimoto

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