Boron nitride film and process for preparing same

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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20419231, C23C 1500

Patent

active

046222367

ABSTRACT:
A boron nitride (BN) film is disclosed having excellent electrical insulating and heat conduction characteristics and capable of acting as seeds for epitaxially growing a semiconductor film thereon which has a crystallizability sufficient to incorporate a semiconductor element therein. The BN film is formed by the growth on a substrate in a manner to be preferentially orientated to a predetermined axis thereof. A process for preparing such film is also disclosed.

REFERENCES:
patent: 3485666 (1969-12-01), Sterling et al.
patent: 3825440 (1974-07-01), Branovich et al.
patent: 4412899 (1983-11-01), Beale
patent: 4415420 (1983-11-01), Beale

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