Boron nitride dopant source for diffusion doping

Details Boron nitride dopant source for diffusion doping Boron nitride dopant source for diffusion doping

1986-10-24

1988-03-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148 33, 252950, 437169, H01L 21385

Patent

active

047343869

ABSTRACT:
A solid body formed by the chemical vapor-phase deposition of, for example, boron nitride is used as a solid dopant source for diffusion doping of semiconductor substrates in place of conventional sintered bodies of boron nitride. By virtue of the extremely low impurity content of the vapor-deposited dopant source in comparison with conventional sintered bodies, which unavoidably contain impurities originating in the powder of the dopant compound for sintering and the binder to facilitate sintering, the semiconductor substrate doped using the inventive dopant source has outstandingly low densities of lattice defects and dislocations in addition to the absence of troubles in the diffusion process due to melting of the binder contained in the sintered dopant sources.

REFERENCES:
patent: 3243373 (1966-03-01), Reuschel
patent: 3540926 (1970-11-01), Rairden, III
patent: 4264803 (1981-04-01), Shinko
patent: 4509997 (1985-04-01), Cockayne et al.
patent: 4558507 (1985-12-01), Okabayashi et al.

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