Boron nitride containing titanium nitride, method of producing t

Details Boron nitride containing titanium nitride, method of producing t Boron nitride containing titanium nitride, method of producing t

1984-11-09

1986-01-21

McCarthy, Helen M.

Stock material or miscellaneous articles

Composite

Of inorganic material

264 81, 423275, 423290, 423297, 4272481, 4272552, 501 92, 501 96, B32B 1800, C04B 3558

Patent

active

045657475

ABSTRACT:
Boron nitride containing titanium nitride in an amount of 0.05 to 10 wt. % which is produced at a relatively low temperature, utilizing a chemical vapor deposition technique. In the deposition process, boron, titanium and nitrogen source gases are introduced into an evacuated reactor together with a carrier and/or diluent gas and contacted with a heated substrate previously mounted in the reactor, whereby boron nitride with titanium nitride is deposited onto the substrate. The deposit thus obtained has a high density, a significantly improved heat-shielding ability, a high degree of anisotropy with respect to thermal diffusivity and a high chemical stability. By using such anisotropic boron nitride with BN ceramics, very useful BN type composite ceramics can be produced.

REFERENCES:
patent: 3152006 (1964-10-01), Basche
patent: 3352637 (1967-11-01), Heymer et al.
patent: 3451772 (1969-06-01), McCabe et al.
Campbell, I. E. et al., "The Vapor-Phase Deposition of Refractory Materials"-Trans. Electrochem. Soc., 96 (5), 1949, pp. 318-333.

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